Ikki o‘lchamli molibden ditelluridi (MoTe₂) asosidagi yarimo‘tkazgich nanostrukturalar
Qabul qilingan: 2026-05-30
Nashr etilgan: 2026-06-06
Annotatsiya
Jahonda elektronika sanoatining rivojlanishi va yashil energetika ustuvor yo‘nalishlarining kengayishi global energetik muammolarni hal etishda qayta tiklanuvchi hamda aqlli materiallarning ahamiyati ortib borayotganini ko‘rsatmoqda. Shu nuqtayi nazardan, ikki o‘lchamli (2D) o‘tish metallari dixalkogenidlari (TMD), xususan, MoTe₂ tuzilmalari asosidagi yarimo‘tkazgich materiallar yuqori funksional ko‘rsatkichlari va ularni olish uchun talab etiladigan tajriba sharoitlarining nisbatan soddaligi tufayli yetakchi ilmiy-tadqiqot markazlarining katta e’tiborini tortmoqda. MoTe₂ ning yarimo‘tkazgich xususiyati, yuqori kimyoviy barqarorligi va sozlanadigan elektron tuzilishi uni yuqori samarali nanoelektron va optoelektron qurilmalarni yaratish uchun juda istiqbolli materialga aylantiradi. Hozirgi vaqtda yuqori vakuum sharoitida MoTe₂ asosidagi yarimo‘tkazgich nanotranzistorlarni tayyorlash, ionli suyuqliklar yordamida elektr zaryad tashilishi xususiyatlarini boshqarish hamda samarali funksional qurilmalar yaratish uchun optoelektron ko‘rsatkichlarni yaxshilash bo‘yicha ko‘plab yondashuvlar ishlab chiqilgan.
Kalit so‘zlar
Adabiyotlar ro'yxati
-
Gao, X.; Vaidya, S.; Li, K.; Ju, P.; Jiang, B.; Xu, Z.; Allcca, A.E.L.; Shen, K.; Taniguchi, T.; Watanabe, K. Nuclear spin polarization and control in hexagonal boron nitride. Nat. Mater. 2022, 21, 1024–1028. [Google Scholar] [CrossRef] [PubMed]
-
Ogawa, S.; Fukushima, S.; Shimatani, M. Hexagonal Boron Nitride for Photonic Device Applications: A Review. Materials 2023, 16, 2005. [Google Scholar]
-
Kim, K.K.; Lee, H.S.; Lee, Y.H. Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics. Chem. Soc. Rev. 2018, 47, 6342–6369. [Google Scholar]
-
Choi, Y.; Kang, J.; Jariwala, D.; Kang, M.S.; Marks, T.J.; Hersam, M.C.; Cho, J.H. Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures. Adv. Mater. 2016, 28, 3742–3748. [Google Scholar]
-
Chen, Y.; Xing, W.; Wang, X.; Shen, B.; Yuan, W.; Su, T.; Ma, Y.; Yao, Y.; Zhong, J.; Yun, Y. Role of oxygen in ionic liquid gating on two-dimensional Cr2Ge2Te6: A non-oxide material. ACS Appl. Mater. Interfaces 2018, 10, 1383–1388. [Google Scholar] [CrossRef]
-
Wu, E.; Xie, Y.; Zhang, J.; Zhang, H.; Hu, X.; Liu, J.; Zhou, C.; Zhang, D. Dynamically controllable polarity modulation of MoTe2 field-effect transistors through ultraviolet light and electrostatic activation. Sci. Adv. 2019, 5, eaav3430. [Google Scholar] [CrossRef]
-
Nguyen, P.H.; Nguyen, D.H.; Kim, H.; Jeong, H.M.; Oh, H.M.; Jeong, M.S. Synergistic hole-doping on ultrathin MoTe2 for highly stable unipolar field-effect transistor. Appl. Surf. Sci. 2022, 596, 153567. [Google Scholar]
-
Chen, J.; Feng, Z.; Fan, S.; Shi, S.; Yue, Y.; Shen, W.; Xie, Y.; Wu, E.; Sun, C.; Liu, J. Contact engineering of molybdenum ditelluride field effect transistors through rapid thermal annealing. ACS Appl. Mater. Interfaces 2017, 9, 30107–30114. [Google Scholar] [CrossRef]
-
Avsar, A.; Vera-Marun, I.J.; Tan, J.Y.; Watanabe, K.; Taniguchi, T.; Castro Neto, A.H.; Ozyilmaz, B. Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors. ACS Nano 2015, 9, 4138–4145. [Google Scholar] [PubMed]
-
Ryu, H.; Lee, Y.; Kim, H.J.; Kang, S.H.; Kang, Y.; Kim, K.; Kim, J.; Janicek, B.E.; Watanabe, K.; Taniguchi, T. Anomalous Dimensionality-Driven Phase Transition of MoTe2 in Van der Waals Heterostructure. Adv. Funct. Mater. 2021, 31, 2107376. [Google Scholar]
-
Mishra, Y.K.; Murugan, N.A.; Kotakoski, J.; Adam, J. Progress in electronics and photonics with nanomaterials. Vacuum 2017, 146, 304–307. [Google Scholar] [CrossRef]
-
Nazarov, A.; Balestra, F.; Kilchytska, V.; Flandre, D. Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting; Springer: Berlin/Heidelberg, Germany, 2014. [Google Scholar]
-
Kamyshny, A.; Magdassi, S. Conductive nanomaterials for printed electronics. Small 2014, 10, 3515–3535. [Google Scholar] [PubMed]
-
Dwivedi, N.; Kumar, S.; Carey, J.D.; Dhand, C. Functional nanomaterials for electronics, optoelectronics, and bioelectronics. J. Nanomater. 2015, 2015, 136465. [Google Scholar] [CrossRef]
-
Razzokov, J.; Marimuthu, P.; Saidov, K.; Ruzimuradov, O.; Mamatkulov, S. Penetration of Chitosan into the Single Walled Armchair Carbon Nanotubes: Atomic Scale Insight. Crystals 2021, 11, 1174. [Google Scholar] [CrossRef]
-
Duong, N.T.; Park, C.; Nguyen, D.H.; Nguyen, P.H.; Tran, T.U.; Park, D.Y.; Lee, J.; Nguyen, D.A.; Oh, J.H.; Yu, Y.S. Gate-controlled MoTe2 homojunction for sub-thermionic subthreshold swing tunnel field-effect transistor. Nano Today 2021, 40, 101263. [Google Scholar] [CrossRef]
Mualliflar haqida
Litsenziya
This work is licensed under a Creative Commons Attribution 4.0 International License.