The semiconductor nanostructures based on two-dimensional molybdenum ditelluride (MoTe2)
Received: 2026-05-30
Published: 2026-06-06
Abstract
In the world, the advancement of the electronics industry worldwide, together with the expansion of green energy priorities, has highlighted the increasing significance of renewable and smart materials in addressing global energy challenges. In this context, semiconductor materials based on two-dimensional (2D) transition metal dichalcogenides (TMDs), particularly MoTe₂ structures, have attracted considerable attention from leading scientific research centers due to their high functional performance and the relatively less demanding experimental conditions required for their fabrication. The semiconducting nature, excellent chemical stability, and tunable electronic structure of MoTe₂ make it a highly promising candidate for the development of high-performance nanoelectronic and optoelectronic devices. At present, numerous approaches have been established for fabricating MoTe₂-based semiconductor nanotransistors under high-vacuum conditions, regulating electrical transport characteristics through ionic liquids, and enhancing optoelectronic performance to develop efficient functional devices.
Keywords
List of references
-
Gao, X.; Vaidya, S.; Li, K.; Ju, P.; Jiang, B.; Xu, Z.; Allcca, A.E.L.; Shen, K.; Taniguchi, T.; Watanabe, K. Nuclear spin polarization and control in hexagonal boron nitride. Nat. Mater. 2022, 21, 1024–1028. [Google Scholar] [CrossRef] [PubMed]
-
Ogawa, S.; Fukushima, S.; Shimatani, M. Hexagonal Boron Nitride for Photonic Device Applications: A Review. Materials 2023, 16, 2005. [Google Scholar]
-
Kim, K.K.; Lee, H.S.; Lee, Y.H. Synthesis of hexagonal boron nitride heterostructures for 2D van der Waals electronics. Chem. Soc. Rev. 2018, 47, 6342–6369. [Google Scholar]
-
Choi, Y.; Kang, J.; Jariwala, D.; Kang, M.S.; Marks, T.J.; Hersam, M.C.; Cho, J.H. Low-Voltage Complementary Electronics from Ion-Gel-Gated Vertical Van der Waals Heterostructures. Adv. Mater. 2016, 28, 3742–3748. [Google Scholar]
-
Chen, Y.; Xing, W.; Wang, X.; Shen, B.; Yuan, W.; Su, T.; Ma, Y.; Yao, Y.; Zhong, J.; Yun, Y. Role of oxygen in ionic liquid gating on two-dimensional Cr2Ge2Te6: A non-oxide material. ACS Appl. Mater. Interfaces 2018, 10, 1383–1388. [Google Scholar] [CrossRef]
-
Wu, E.; Xie, Y.; Zhang, J.; Zhang, H.; Hu, X.; Liu, J.; Zhou, C.; Zhang, D. Dynamically controllable polarity modulation of MoTe2 field-effect transistors through ultraviolet light and electrostatic activation. Sci. Adv. 2019, 5, eaav3430. [Google Scholar] [CrossRef]
-
Nguyen, P.H.; Nguyen, D.H.; Kim, H.; Jeong, H.M.; Oh, H.M.; Jeong, M.S. Synergistic hole-doping on ultrathin MoTe2 for highly stable unipolar field-effect transistor. Appl. Surf. Sci. 2022, 596, 153567. [Google Scholar]
-
Chen, J.; Feng, Z.; Fan, S.; Shi, S.; Yue, Y.; Shen, W.; Xie, Y.; Wu, E.; Sun, C.; Liu, J. Contact engineering of molybdenum ditelluride field effect transistors through rapid thermal annealing. ACS Appl. Mater. Interfaces 2017, 9, 30107–30114. [Google Scholar] [CrossRef]
-
Avsar, A.; Vera-Marun, I.J.; Tan, J.Y.; Watanabe, K.; Taniguchi, T.; Castro Neto, A.H.; Ozyilmaz, B. Air-stable transport in graphene-contacted, fully encapsulated ultrathin black phosphorus-based field-effect transistors. ACS Nano 2015, 9, 4138–4145. [Google Scholar] [PubMed]
-
Ryu, H.; Lee, Y.; Kim, H.J.; Kang, S.H.; Kang, Y.; Kim, K.; Kim, J.; Janicek, B.E.; Watanabe, K.; Taniguchi, T. Anomalous Dimensionality-Driven Phase Transition of MoTe2 in Van der Waals Heterostructure. Adv. Funct. Mater. 2021, 31, 2107376. [Google Scholar]
-
Mishra, Y.K.; Murugan, N.A.; Kotakoski, J.; Adam, J. Progress in electronics and photonics with nanomaterials. Vacuum 2017, 146, 304–307. [Google Scholar] [CrossRef]
-
Nazarov, A.; Balestra, F.; Kilchytska, V.; Flandre, D. Functional Nanomaterials and Devices for Electronics, Sensors and Energy Harvesting; Springer: Berlin/Heidelberg, Germany, 2014. [Google Scholar]
-
Kamyshny, A.; Magdassi, S. Conductive nanomaterials for printed electronics. Small 2014, 10, 3515–3535. [Google Scholar] [PubMed]
-
Dwivedi, N.; Kumar, S.; Carey, J.D.; Dhand, C. Functional nanomaterials for electronics, optoelectronics, and bioelectronics. J. Nanomater. 2015, 2015, 136465. [Google Scholar] [CrossRef]
-
Razzokov, J.; Marimuthu, P.; Saidov, K.; Ruzimuradov, O.; Mamatkulov, S. Penetration of Chitosan into the Single Walled Armchair Carbon Nanotubes: Atomic Scale Insight. Crystals 2021, 11, 1174. [Google Scholar] [CrossRef]
-
Duong, N.T.; Park, C.; Nguyen, D.H.; Nguyen, P.H.; Tran, T.U.; Park, D.Y.; Lee, J.; Nguyen, D.A.; Oh, J.H.; Yu, Y.S. Gate-controlled MoTe2 homojunction for sub-thermionic subthreshold swing tunnel field-effect transistor. Nano Today 2021, 40, 101263. [Google Scholar] [CrossRef]
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